5 edition of Development of advanced methods for continuous Czochralski growth found in the catalog.
DOE/JPL/954884-1 ; DOE/JPL/954884-4.Authors: R. G. Wolfson, C. B. Sibley, C. P. Chartier.Contract NAS-7-100-954884.
|Statement||Dept. of Energy, [Division of] Solar Energy|
|Publishers||Dept. of Energy, [Division of] Solar Energy|
|The Physical Object|
|Pagination||xvi, 88 p. :|
|Number of Pages||47|
nodata File Size: 4MB.
Complete list of inscriptions on the slabs, tablets and monuments in thechapel of St. Nicholas, Kings Lynn, existing in the year 1937.
Effects of leader topping and branch pruning on efficiency of Douglas-fir cone harvesting with a tree shaker
EVALUATION OF THE GROUND WATER STORAGE CAPACITY IN THE SOPER CREEK SUB-BASIN USING THE PHYSICAL PARAMETRIC APPROACH.
Y10— TECHNICAL SUBJECTS COVERED BY FORMER USPC• The deposited crystalline film is called an epitaxial film or epitaxial layer. It will be appreciated that for similar reasons the pre-melter can be fabricated from these advantageous materials. 229910052594 sapphire Inorganic materials 0. Additional heat flow is by radiation, very little is by convection at this stage. The added material is called dopant and the process is called doping.
The next step up, 450 mm, is currently scheduled for introduction in 2018.
With the optimal arrangement of independently controlled heaters underneath the low aspect ratio crucible, the thermal path into the charge across the contact points between the pieces of solid material is minimized.
The process begins when the chamber is heated to approximately 1500 degrees Celsius, melting the silicon. 238000006011 modification reactions Methods 0. 238000006243 chemical reactions Methods 0. Multiple crystal pulling chambers are rotatably or otherwise sequentially disposed with respect to the crucible, such that upon completion of a first single crystal silicon ingot, the first pulling chamber moves the finished silicon ingot out of the growing zone for cooling, and a successive pulling chamber moves to position a new crystal in the growing zone.
CERN RD50 Status Report 2004, CERN-LHCC-2004-031 and LHCC-RD-005 and cited literature therein• C30B— SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC Development of advanced methods for continuous Czochralski growth OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR• Y10— TECHNICAL SUBJECTS COVERED BY FORMER USPC• Y10— TECHNICAL SUBJECTS COVERED BY FORMER USPC• With advanced technology, high-end device manufacturers use 200 mm and 300 mm diameter wafers.
Heater control 240 includes a microprocessor controller for controlling the activation time and consequently thermal output of each heater element in response to signals from the sensors 234. This advantageously eliminates the complex mechanisms in a conventional CZ system necessary for coordinating vertical travel of the crucible with the pulling of the crystal.
Y— GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS• Section summarizes the present state of these two important crystals in terms of growth and applications.
Across multiple solar cells, such defects can seriously decrease output current.
An annular region 211 adjacent the opening is deflected downward toward the melt to decrease heat flow along the ingot 203 and for minimizing thermal shock when the ingot is removed from the melt 222.
Thus, in a conventional CZ process the crucible is generally a single use item.