5 edition of Development of advanced methods for continuous Czochralski growth found in the catalog.

Development of advanced methods for continuous Czochralski growth

silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project.

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Published by Administrator in Dept. of Energy, [Division of] Solar Energy

    Places:
  • United States
    • Subjects:
    • Dept. of Energy, [Division of] Solar Energy


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      • DOE/JPL/954884-1 ; DOE/JPL/954884-4.Authors: R. G. Wolfson, C. B. Sibley, C. P. Chartier.Contract NAS-7-100-954884.

        StatementDept. of Energy, [Division of] Solar Energy
        PublishersDept. of Energy, [Division of] Solar Energy
        Classifications
        LC Classifications1978
        The Physical Object
        Paginationxvi, 88 p. :
        Number of Pages47
        ID Numbers
        ISBN 10nodata
        Series
        1nodata
        2
        3

        nodata File Size: 4MB.


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Y10— TECHNICAL SUBJECTS COVERED BY FORMER USPC• The deposited crystalline film is called an epitaxial film or epitaxial layer. It will be appreciated that for similar reasons the pre-melter can be fabricated from these advantageous materials. 229910052594 sapphire Inorganic materials 0. Additional heat flow is by radiation, very little is by convection at this stage. The added material is called dopant and the process is called doping.

The next step up, 450 mm, is currently scheduled for introduction in 2018.

Dislocation

With the optimal arrangement of independently controlled heaters underneath the low aspect ratio crucible, the thermal path into the charge across the contact points between the pieces of solid material is minimized.

The process begins when the chamber is heated to approximately 1500 degrees Celsius, melting the silicon. 238000006011 modification reactions Methods 0. 238000006243 chemical reactions Methods 0. Multiple crystal pulling chambers are rotatably or otherwise sequentially disposed with respect to the crucible, such that upon completion of a first single crystal silicon ingot, the first pulling chamber moves the finished silicon ingot out of the growing zone for cooling, and a successive pulling chamber moves to position a new crystal in the growing zone.

CERN RD50 Status Report 2004, CERN-LHCC-2004-031 and LHCC-RD-005 and cited literature therein• C30B— SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC Development of advanced methods for continuous Czochralski growth OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR• Y10— TECHNICAL SUBJECTS COVERED BY FORMER USPC• Y10— TECHNICAL SUBJECTS COVERED BY FORMER USPC• With advanced technology, high-end device manufacturers use 200 mm and 300 mm diameter wafers.

Heater control 240 includes a microprocessor controller for controlling the activation time and consequently thermal output of each heater element in response to signals from the sensors 234. This advantageously eliminates the complex mechanisms in a conventional CZ system necessary for coordinating vertical travel of the crucible with the pulling of the crystal.

Y— GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS• Section summarizes the present state of these two important crystals in terms of growth and applications.